8月28日 Atomic-scale analyses of plasma-surface interactions for modern semiconductor processes

　　时间：8月28日 9:00

　　地点：四号楼6楼中间会议室

　　报告人：Satoshi Hamaguchi,Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

　　摘要：As the sizes of semiconductor devices continue to diminish and are now approaching atomic scales, the downsizing of transistors following Moore’s law is bound to end in the near future. However, the continuing market demand for higher performance and lower energy consumption of large-scale integrated (LSI) circuits has driven invention of new device technologies such as three-dimensional (3D) device structures and devices based on non-silicon materials. Manufacturing of these non-conventional devices also poses new challenges for processing technologies. For example, magnetic materials used in magnetoresistive random-access memories (MRAMs) cannot be etched efficiently by the existing reactive ion etching (RIE) technologies, which has so far limited the level of integration of MRAM devices. The modern near-atomic-scale devices also require atomic level precision in their manufacturing processes, which has also driven new technologies such as atomic layer deposition (ALD) and atomic layer etching (ALE). In this study, we shall review our recent work on analyses of etching selectivity and surface chemical reactions for magnetic materials, metal oxides, Si-based materials as well as damage formation mechanisms due to ion bombardment during RIE processes. In our analyses, we use multi-beam injection experiments, classical molecular dynamics simulations, and quantum mechanical simultios to emulate elementary processes of plasma-surface interactions that take place in RIE processes.

　　报告人简历：

　　Satoshi Hamaguchi, Ph.D., has been Professor of Engineering at the Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Osaka, Japan, since 2004. He has been working on analyses of plasma surface interactions for semiconductor etching and deposition processes and surface modification of biomaterials and medical devices, using modeling, numerical simulations, and beam and plasma experiments. His interest also includes plasma medicine and nuclear fusion.

　　Prior to joining Osaka University, Dr. Hamaguchi was Associate Professor of Energy Science, Graduate School of Energy Sciences, Kyoto University, Kyoto, Japan, from 1998 to 2004, Research Staff Member of T. J. Watson Research Center, IBM Research Division, IBM Co. at Yorktown Heights, New York, USA, from 1990 to 1998, and Research Fellow at the Institute of Fusion Studies, University of Texas, Austin, Texas, USA, from 1988 to 1990.

　　Dr. Hamaguchi received his M. Sci and Ph.D. degrees in mathematics from Courant Institute of Mathematical Sciences, Department of Mathematics, New York University, New York, USA, in 1986 and 1988, B. Sc. an M. Sci in physics from the Department of Physics, University of Tokyo, Tokyo, Japan, in 1982 and 1984. He also holds a Ph. D. in physics from the University of Tokyo. He is a Fellow of American Vacuum Society and American Physical Society.

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